Differences

This shows you the differences between two versions of the page.

--- config:netlist [2024/08/04 10:07] – [LEF/DEF configuration options] rajit
+++ config:netlist [2025/02/22 12:53] (current) – [Transistor device names] rajit
@@ Line 6: / Line 6: @@
 <code>
-real lambda 0.03e-6
+real lambda 0.3e-6
 </code>
-This is the scale factor used to convert to metric units from the dimensionless transistor sizes.
+This is the scale factor used to convert to metric units from the dimensionless transistor sizes. This is normally set to F/2, where F is the feature size. In this example, we are assuming a 0.6 micron feature size.
 ===== Device generation and parameters =====
@@ Line 141: / Line 140: @@
 string nfet_hvt  "nhvt"
 </code>
-The strings above are used for the device names for each transistor type. Note that the device type names are part of the technology-independent ACT configuration.
+The strings above are used for the device names for each transistor type. Note that the device type names are part of the [[config:start#devices|technology-independent ACT configuration]].
 If the FET devices being used are floating-body SOI devices, then their spice representation is not of type "M" (model), but of type "X" (subcircuit). The device has the usual source, gate, drain terminals, but the fourth terminal is no longer bulk, but instead the substrate. All substrate terminals are grounded (as opposed to bulk terminals that are connected to the appropriate supply), so this requires a modified netlist. To have the "svt" device correspond to an SOI-type, use the following: